Kasirajan, Hari Anand
Huang, Wen-Hsien
Kao, Ming-Hsuan
Wang, Hsing-Hsiang
Shieh, Jia-Min
Pan, Fu-Ming
Shen, Chang-Hong
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (MOST 105-2218-E-492-006)
Ministry of Science and Technology, Taiwan (MOST 106-2221-E-492-036)
Journal title: Applied Physics Express
Article type: lett
Article title: Low-hole concentration polycrystalline germanium by CO2 laser annealing for the fabrication of an enhancement-mode nMOSFET
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-07-20
Date accepted: 2018-09-06
Online publication date: 2018-09-26