Anderson, Travis J.
Wheeler, Virginia D.
Shahin, David I.
Tadjer, Marko J.
Koehler, Andrew D.
Hobart, Karl D.
Christou, Aris
Kub, Francis J.
Eddy, Charles R. Jr.
Article Title: Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2016 The Japan Society of Applied Physics
Publication dates
Date Received: 2016-04-19
Date Accepted: 2016-06-11
Online publication date: 2016-06-28