Sometani, Mitsuru
Okamoto, Dai
Harada, Shinsuke
Ishimori, Hitoshi
Takasu, Shinji
Hatakeyama, Tetsuo
Takei, Manabu
Yonezawa, Yoshiyuki
Fukuda, Kenji
Okumura, Hajime
Article Title: Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2016 The Japan Society of Applied Physics
Publication dates
Date Received: 2015-09-29
Date Accepted: 2015-12-08
Online publication date: 2016-03-03