Nanjo, Takuma
Imai, Akifumi
Kurahashi, Kenichiro
Matsuda, Takashi
Suita, Muneyoshi
Yagyu, Eiji
Article Title: Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2016 The Japan Society of Applied Physics
Publication dates
Date Received: 2015-11-30
Date Accepted: 2015-12-25
Online publication date: 2016-04-14