Shimizu, Haruka
Shima, Akio
Shimamoto, Yasuhiro
Iwamuro, Noriyuki
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Ohmic contact on n- and p-type ion-implanted 4H-SiC with low-temperature metallization process for SiC MOSFETs
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2016-10-12
Date accepted: 2016-12-21
Online publication date: 2017-03-21