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Very low and broad threshold voltage fluctuation caused by ion implantation to silicon-on-insulator triple-gate fin-type field effect transistor using three-dimensional process and device simulations

Crossref DOI link: https://doi.org/10.7567/JJAP.56.06GF12

Published Online: 2017-05-16

Published Print: 2017-06-01

Update policy: https://doi.org/10.1088/crossmark-policy

Authors

Tsutsumi, Toshiyuki
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Journal title: Japanese Journal of Applied Physics

Article type: paper

Article title: Very low and broad threshold voltage fluctuation caused by ion implantation to silicon-on-insulator triple-gate fin-type field effect transistor using three-dimensional process and device simulations

Copyright information: © 2017 The Japan Society of Applied Physics

Publication dates

Date received: 2016-11-30

Date accepted: 2017-01-21

Online publication date: 2017-05-16

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