Carey, Patrick H. IV
Ren, Fan
Hays, David C.
Gila, Brent P.
Pearton, Stephen J. https://orcid.org/0000-0001-6498-1256
Jang, Soohwan
Kuramata, Akito
Funding for this research was provided by:
Defense Threat Reduction Agency (1-17-1-011)
National Research Foundation of Korea (2014R1A1A4A01008877)
National Research Foundation of Korea (2015R1D1A1A01058663)
New Energy and Industrial Technology Development Organization (201345)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Band alignment of atomic layer deposited SiO2and HfSiO4with $(\bar{2}01)$ β-Ga2O3
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-04-14
Date accepted: 2017-05-08
Online publication date: 2017-06-14