Jeong, Chan-Yong
Kim, Hee-Joong
Hong, Sae-Young
Song, Sang-Hun
Kwon, Hyuck-In
Funding for this research was provided by:
Korea Institute for Advancement of Technology (N045000003)
National Research Foundation of Korea (2017R1A2A2A14001213)
Journal title: Japanese Journal of Applied Physics
Article type: lett
Article title: Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium–gallium–zinc oxide thin-film transistors
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-04-17
Date accepted: 2017-06-13
Online publication date: 2017-07-04