Kim, Kyu Sang https://orcid.org/0000-0001-6270-8002
Funding for this research was provided by:
National Research Foundation of Korea (2013R1A1A1007296)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-03-21
Date accepted: 2017-06-29
Online publication date: 2017-08-23