Chiu, Yu Sheng
Luc, Quang Ho
Lin, Yueh Chin
Huang, Jui Chien
Dee, Chang Fu
Majlis, Burhanuddin Yeop
Chang, Edward Yi
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2016-12-28
Date accepted: 2017-06-21
Online publication date: 2017-08-24