Nishiguchi, Kenya https://orcid.org/0000-0002-6523-7741
Kaneki, Syota
Ozaki, Shiro
Hashizume, Tamotsu
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Copyright information: © 2017 The Japan Society of Applied Physics
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Publication dates
Date received: 2017-06-19
Date accepted: 2017-08-01
Online publication date: 2017-09-11