Takeuchi, Wakana
Yamamoto, Kensaku
Sakashita, Mitsuo
Nakatsuka, Osamu
Zaima, Sigeaki
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-04-10
Date accepted: 2017-09-20
Online publication date: 2017-12-18