Hayashida, Tetsuro
Nanjo, Takuma
Furukawa, Akihiko
Watahiki, Tatsuro
Yamamuka, Mikio
Journal title: Japanese Journal of Applied Physics
Article type: lett
Article title: Leakage current reduction of vertical GaN junction barrier Schottky diodes using dual-anode process
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-11-15
Date accepted: 2017-12-06
Online publication date: 2018-02-21