Ueda, Daiki
Takeuchi, Kiyoshi
Kobayashi, Masaharu
Hiramoto, Toshiro
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Optimizing MOS-gated thyristor using voltage-based equivalent circuit model for designing steep-subthreshold-slope PN-body-tied silicon-on-insulator FET
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-10-10
Date accepted: 2017-12-25
Online publication date: 2018-03-02