Shaari, Safizan
Naka, Shigeki
Okada, Hiroyuki
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Gate-bias and temperature dependence of charge transport in dinaphtho[2,3-b:2′,3′-d]thiophene thin-film transistors with MoO3/Au electrodes
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-10-10
Date accepted: 2017-11-22
Online publication date: 2018-02-20