Hayashi, Shohei https://orcid.org/0000-0001-5648-804X
Yamashita, Tamotsu
Senzaki, Junji
Miyazato, Masaki
Ryo, Mina
Miyajima, Masaaki
Kato, Tomohisa
Yonezawa, Yoshiyuki
Kojima, Kazutoshi
Okumura, Hajime
Funding for this research was provided by:
New Energy and Industrial Technology Development Organization (14101669-0)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-10-10
Date accepted: 2017-12-05
Online publication date: 2018-02-26