Nozaki, Mikito
Watanabe, Kenta
Yamada, Takahiro
Shih, Hong-An
Nakazawa, Satoshi
Anda, Yoshiharu
Ueda, Tetsuzo
Yoshigoe, Akitaka
Hosoi, Takuji
Shimura, Takayoshi
Watanabe, Heiji
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-12-10
Date accepted: 2018-02-07
Online publication date: 2018-05-10