Ishii, Hajime
Ueno, Hiroaki
Ueda, Tetsuzo
Endoh, Tetsuo
Funding for this research was provided by:
Japan Science and Technology Agency (JPMJAC1301)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-11-30
Date accepted: 2018-03-05
Online publication date: 2018-05-16