Funding for this research was provided by:
Japan Society for the Promotion of Science (16H06360)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Visualization of traps at SiO2/SiC interfaces near the conduction band by local deep level transient spectroscopy at low temperatures
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-02-05
Date accepted: 2018-05-12
Online publication date: 2018-07-20