Zhang, Guohe
Yang, Jiangjiang
Jiang, Peilin
Bu, Jianhui
Li, Binhong
Li, Bo
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Modeling the threshold voltage variation induced by channel random dopant fluctuation in fully depleted silicon-on-insulator MOSFETs
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-03-06
Date accepted: 2018-06-25
Online publication date: 2018-09-11