Zhang, Yongwang
Zheng, Jun
Liu, Zhi
Xue, Chunlai
Li, Chuanbo
Zuo, Yuhua
Cheng, Buwen
Wang, Qiming
Funding for this research was provided by:
National Natural Science Foundation of China (Grant No.61534004, 61411136001, 61674140, 61774143)
Beijing Municipal Natural Science Foundation (Grant No. 4162063)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Electrical characteristics of ohmic contact on n-type in situ doped GeSiSn
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-01-29
Date accepted: 2018-07-09
Online publication date: 2018-09-06