Nomura, Kenji
Wang, Wensheng
Yamaguchi, Hideshi
Nakamura, Ko
Eshita, Takashi
Ozawa, Soichiro
Takai, Kazuaki
Mihara, Satoru
Hikosaka, Yukinobu
Hamada, Makoto
Kojima, Manabu
Kataoka, Yuji
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOxbottom electrode for the La-doped Pb(Zr,Ti)O3ferroelectric capacitor
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-05-22
Date accepted: 2018-06-11
Online publication date: 2018-08-31