Saito, Nobuyoshi
Sawabe, Tomoaki
Kataoka, Junji
Ueda, Tomomasa
Tezuka, Tsutomu
Ikeda, Keiji
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μm−1 off-state leakage current
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-10-01
Date accepted: 2018-11-27
Online publication date: 2019-03-14