Fukushima, Hayata http://orcid.org/0000-0002-3797-8710
Usami, Shigeyoshi
Ogura, Masaya
Ando, Yuto
Tanaka, Atsushi
Deki, Manato
Kushimoto, Maki
Nitta, Shugo
Honda, Yoshio
Amano, Hiroshi
Funding for this research was provided by:
Ministry of Education, Culture, Sports, Science and Technology
Journal title: Applied Physics Express
Article type: lett
Article title: Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-11-22
Date accepted: 2019-01-11
Online publication date: 2019-02-01