Cai, Wei
Yuan, Jialei
Ni, Shuyu
Shi, Zheng
Zhou, Weidong
Liu, Yuhuai
Wang, Yongjin
Amano, Hiroshi
Funding for this research was provided by:
Natural Science Foundation of Jiangsu Province (BE2016186)
National Natural Science Foundation of China (61322112, 61531166004)
Nanjing Institute of Technology (CKJA201705)
Ministry of Science and Technology of the People’s Republic of China (2016YFE0118400)
Ministry of Education of the People’s Republic of China (the “111” project)
Journal title: Applied Physics Express
Article type: lett
Article title: GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2019-01-13
Date accepted: 2019-01-28
Online publication date: 2019-02-14