Nakamura, Daisuke http://orcid.org/0000-0002-7808-0528
Kimura, Taishi http://orcid.org/0000-0002-1284-1814
Journal title: Applied Physics Express
Article type: lett
Article title: Ultrahigh-yield growth of GaN via halogen-free vapor-phase epitaxy
Copyright information: © 2018 The Japan Society of Applied Physics
License information: cc-by Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2018-03-30
Date accepted: 2018-05-01
Online publication date: 2018-05-22