Kuzuhara, Masaaki
Asubar, Joel T.
Tokuda, Hirokuni
Article Title: AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2016 The Japan Society of Applied Physics
Publication dates
Date Received: 2015-10-27
Date Accepted: 2016-04-19
Online publication date: 2016-06-10