Tubular Channel Triple-Material Gate-Wrap-Around MOSFET for Industry 5.0-Low Power and High Performance Applications Incorporating Temperature Variations
Crossref DOI link: https://doi.org/10.1007/978-3-031-87837-4_16
Published Online: 2025-07-18
Published Print: 2025
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Banerjee, Pritha
Das, Jayoti
Text and Data Mining valid from 2025-01-01
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Chapter History
First Online: 18 July 2025