Double Gate Tunnel Field Effect Transistor with Extended Source Structure and Impact Ionization Enhanced Current
Crossref DOI link: https://doi.org/10.1007/978-981-10-5903-2_102
Published Online: 2018-04-11
Published Print: 2018
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, Deepak
Jain, Prateek
License valid from 2018-01-01