Mechanisms of Surface State Formation at Si/SiO2 Interface in the Nanosized MOS Transistors
Crossref DOI link: https://doi.org/10.1007/978-981-13-6133-3_34
Published Online: 2019-02-09
Published Print: 2019
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Volkov, A. N.
Andreev, D. V.
Maslovsky, V. M.
Text and Data Mining valid from 2019-01-01
Version of Record valid from 2019-01-01
Chapter History
First Online: 9 February 2019