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GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review

Crossref DOI link: https://doi.org/10.1007/978-981-15-3172-9_33

Published Online: 2020-04-23

Published Print: 2020

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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