Analysis of InN-Based Surrounded Gate Tunnel Field-Effect Transistor for Terahertz Applications
Crossref DOI link: https://doi.org/10.1007/978-981-15-3235-1_6
Published Online: 2020-03-21
Published Print: 2020
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dutta, Ritam
Paitya, Nitai
Text and Data Mining valid from 2020-01-01
Chapter History
First Online: 21 March 2020