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Built-in Reliability Investigation of Gate-Drain Underlapped PNIN-GAA-TFET for Improved Linearity and Reduced Intermodulation Distortion

Crossref DOI link: https://doi.org/10.1007/978-981-15-5089-8_19

Published Online: 2020-09-01

Published Print: 2020

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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