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A Threshold Voltage Model for SiGe Source/Drain Silicon-Nanotube-Based Junctionless Field-Effect Transistor

Crossref DOI link: https://doi.org/10.1007/978-981-15-7937-0_6

Published Online: 2020-10-04

Published Print: 2020

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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