3D Simulation Study of Laterally Gated AlN/β-Ga2O3 HEMT Technology for RF and High-Power Nanoelectronics
Crossref DOI link: https://doi.org/10.1007/978-981-19-2165-0_7
Published Online: 2022-06-24
Published Print: 2023
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, Rajan
Lenka, Trupti Ranjan
Nguyen, Hieu Pham Trung
Text and Data Mining valid from 2022-06-24
Version of Record valid from 2022-06-24
Chapter History
First Online: 24 June 2022