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Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications

Crossref DOI link: https://doi.org/10.1007/978-981-19-2308-1_19

Published Online: 2022-09-12

Published Print: 2023

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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