Computation of Gate-Induced-Drain-Leakage Current Due to Band-to-Band Tunneling for Ultrathin MOSFET
Crossref DOI link: https://doi.org/10.1007/978-981-32-9453-0_1
Published Online: 2019-10-16
Published Print: 2020
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Roy, Krishnendu
Chowdhury, Anal Roy
Deyasi, Arpan
Text and Data Mining valid from 2019-10-16
Chapter History
First Online: 16 October 2019