Short Channel Effects (SCEs) Based Comparative Study of Double-Gate (DG) and Gate-All-Around (GAA) FinFET Structures for Nanoscale Applications
Crossref DOI link: https://doi.org/10.1007/978-981-32-9775-3_62
Published Online: 2019-12-04
Published Print: 2020
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Narendar, Vadthiya
Parihar, Richa
Pandey, Ashutosh Kumar
Text and Data Mining valid from 2019-12-04
Chapter History
First Online: 4 December 2019