Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials
Crossref DOI link: https://doi.org/10.1007/978-981-33-4687-1_49
Published Online: 2021-05-29
Published Print: 2021
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Saravana Kumar, R.
Mohankumar, N.
Baskaran, S.
Poornachandran, R.
Text and Data Mining valid from 2021-01-01
Version of Record valid from 2021-01-01
Chapter History
First Online: 29 May 2021