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Improved Ion/Ioff and Drain Current Ratio of Hafnium-Based Biological Field-Effect Transistor Compared with Different Gate Oxide for Better Performances in Low-Power Applications

Crossref DOI link: https://doi.org/10.1007/978-981-96-1587-2_3

Published Online: 2025-08-27

Published Print: 2025

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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