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Design and Analysis of Dual Metal Control Gate Charge Plasma Tunnel Field-Effect Transistor (TFET) with Gate Engineering to Enhance Radio Frequency (RF) Performance and Linearity

Crossref DOI link: https://doi.org/10.1007/978-981-96-3758-4_6

Published Online: 2025-07-24

Published Print: 2025

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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