Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications
Crossref DOI link: https://doi.org/10.1007/s00034-022-02251-9
Published Online: 2022-12-05
Published Print: 2023-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Abbasian, Erfan https://orcid.org/0000-0003-0073-8737
Grailoo, Bahare
Nayeri, Mahdieh
Text and Data Mining valid from 2022-12-05
Version of Record valid from 2022-12-05
Article History
Received: 22 July 2022
Revised: 22 November 2022
Accepted: 22 November 2022
First Online: 5 December 2022
Declarations
:
: The authors declare that they have no conflict of interest.