Chauhan, Abhishek https://orcid.org/0000-0002-7780-3114
Raman, Ashish https://orcid.org/0000-0002-6720-373X
Article History
Received: 25 November 2024
Revised: 11 February 2025
Accepted: 12 February 2025
First Online: 21 March 2025
Declarations
:
: The authors declare that there is no financial and non financial interest associated with this publication.
: We declared that this manuscript entitled “Novel Charge Plasma Vertically Stacked Dopingless Nanosheet Field-Effect Transistor (DL-NSFET): Proposal and Extensive Analysis” by Abhishek Chauhan and Ashish Raman is original, has not been published before and is not currently being considered for publication.