Study on the effect of polishing pad layer structure on dishing control in chemical mechanical planarization of through-silicon via copper patterned wafer
Crossref DOI link: https://doi.org/10.1007/s00170-026-18235-x
Published Online: 2026-05-02
Published Print: 2026-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pham, Quoc-Phong https://orcid.org/0000-0002-5579-8799
Huy, Le Nam Quoc
Text and Data Mining valid from 2026-05-01
Version of Record valid from 2026-05-01
Article History
Received: 4 January 2026
Accepted: 26 April 2026
First Online: 2 May 2026
Declarations
:
: The authors declare that we have no conflicts of interest.