Modeling the effects of Si-X (X = F, Cl) bonds on the chemical and electronic properties of Si-surface terminated porous 3C-SiC
Crossref DOI link: https://doi.org/10.1007/s00214-016-1861-5
Published Online: 2016-03-26
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Calvino, M.
Trejo, A.
Crisóstomo, M. C.
Iturrios, M. I.
Carvajal, E.
Cruz-Irisson, M.
Text and Data Mining valid from 2016-03-26