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Structural and electrical properties of high-k HfO2 films modified by CHF3 and C4F8/O2 plasmas

Crossref DOI link: https://doi.org/10.1007/s00339-014-8619-5

Published Online: 2014-08-06

Published Print: 2014-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhang, H. Y.

Jin, C. G.

Yang, Y.

Ye, C.

Zhuge, L. J.

Wu, X. M.
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