Analysis of electron beam-induced effect on electrical switching properties of glass chalcogenide GeTe thin films through Raman spectroscopy
Crossref DOI link: https://doi.org/10.1007/s00339-014-8841-1
Published Online: 2015-02-03
Published Print: 2015-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sarkar, Deepangkar
Sanjeev, Ganesh
Mahesha, M. G.
Text and Data Mining valid from 2015-02-03
