Monitoring of amorfization of the oxygen implanted layers in silicon wafers using photothermal radiometry and modulated free carrier absorption methods
Crossref DOI link: https://doi.org/10.1007/s00339-014-8859-4
Published Online: 2014-11-12
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Maliński, M.
Pawlak, M.
Chrobak, Ł.
Pal, S.
Ludwig, A.
License valid from 2014-11-12