Numerical analysis of reverse recovery characteristics of 4H-SiC p+ānāān+ power diode with injection conditions
Crossref DOI link: https://doi.org/10.1007/s00339-014-8894-1
Published Online: 2014-11-25
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wei, Wensheng
Li, Jing
Zhao, Shaoyun
Text and Data Mining valid from 2014-11-25
