Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure
Crossref DOI link: https://doi.org/10.1007/s00339-015-9144-x
Published Online: 2015-04-17
Published Print: 2015-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liao, Kuo-Hsiao
Syu, Yong-En
Sze, Simon M.
Text and Data Mining valid from 2015-04-17